april 2012 fdp054n10 n-chan nel powertrench ? mosfet ?2012 fairchild semiconductor corporation fdp054n10 rev. c1 www.fairchildsemi.com 1 fdp054n10 n-channel powertrench ? mosfet 100v, 144a, 5.5m features ?r ds(on) = 4.6m ( typ.)@ v gs = 10v, i d = 75a ? fast switching speed ? low gate charge ? high performance trench tec hnology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is produced using fairchild semiconductor?s advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application dc to dc converters / synchronous rectification d g s to-220 g s d mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d d r a i n c u r r e n t - continuous (t c = 25 o c, silicon limited) 144* a - continuous (t c = 100 o c, silicon limited) 102 - continuous (t c = 25 o c, package limited) 120 i dm drain current - pulsed (note 1) 576 a e as single pulsed avalanche energy (note 2) 1153 mj dv/dt peak diode avalanche energy (note 3) 6 v/ns p d power dissipation (t c = 25 o c) 263 w - derate above 25 o c1.75w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.57 o c/w r ja thermal resistance, junction to ambient 62.5 *calculated continuous current based on maximum allowable junction temperature. package limitation current is 120a.
fdp054n10 n-chan nel powertrench ? mosfet fdp054n10 rev. c1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdp054n10 fdp054n10 to-220 - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c 100 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.01 - v/ o c i dss zero gate voltage drain current v ds = 100v, v gs = 0v - - 1 a v ds = 100v, v gs = 0v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.53.54.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 75a - 4.6 5.5 m g fs forward transconductance v gs = 10v, i d = 75a (note 4) - 192 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 9985 13280 pf c oss output capacitance - 935 1245 pf c rss reverse transfer capacitance - 390 585 pf q g(tot) total gate charge at 10v v ds = 80v, i d = 75a, v gs = 10v (note 4,5) - 156 203 nc q gs gate to source gate charge - 53 - nc q gd gate to drain ?miller? charge - 48 - nc t d(on) turn-on delay time v dd = 50v, i d = 75a v gs = 10v, r gen = 4.7 (note 4,5) -4498ns t r turn-on rise time - 92 194 ns t d(off) turn-off delay time - 80 170 ns t f turn-off fall time - 39 88 ns i s maximum continuous drain to source diode forward current - - 144 a i sm maximum pulsed drain to source diode forward current - - 576 a v sd drain to source diode forward voltage v gs = 0v, i sd = 75a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd =75a di f /dt = 100a/ s (note 4) -57-ns q rr reverse recovery charge - 121 - nc notes: 1: repetitive rating: pulse width limi ted by maximum junction temperature 2: l = 0.41mh, i as = 75a, v dd = 50v, r g = 25 , starting t j = 25c 3: i sd 75a, di/dt 200a/ s, v dd bv dss , starting t j = 25c 4: pulse test: pulse width 300 s, duty cycle 2% 5: essentially independent of operating temperature typical characteristics
fdp054n10 n-chan nel powertrench ? mosfet fdp054n10 rev. c1 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 6 100 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v i d , drain current[a] v ds , drain-source voltage[v] 1000 34567 1 10 100 1000 -55 o c 150 o c * notes : 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 100 200 300 400 3 4 5 6 7 * note : t c = 25 o c v gs = 20v v gs = 10v r ds ( on ) [ m ] , drain-source on-resistance i d , drain current [a] 0 30 60 90 120 150 180 0 2 4 6 8 10 * note : i d = 75a v ds = 20v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 1000 10000 100000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd * note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30
fdp054n10 n-chan nel powertrench ? mosfet fdp054n10 rev. c1 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -80 -40 0 40 80 120 160 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -80 -40 0 40 80 120 160 200 0.4 0.8 1.2 1.6 2.0 2.4 * notes : 1. v gs = 10v 2. i d = 75a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 0.1 1 10 100 400 0.1 1 10 100 1000 100 s 10 ms dc 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r jc = 0.57 o c/w t c = 25 o c 25 50 75 100 125 150 175 0 50 100 150 limitted by package t c , case temperature [ o c ] i d , drain current [a] 10 -5 10 -4 10 -3 10 -2 10 -1 110 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 * notes : 1. z jc (t) = 0.57 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
fdp054n10 n-chan nel powertrench ? mosfet fdp054n10 rev. c1 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdp054n10 n-chan nel powertrench ? mosfet fdp054n10 rev. c1 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fdp054n10 n-chan nel powertrench ? mosfet fdp054n10 rev. c1 www.fairchildsemi.com 7 package dimensions dimensions in millimeters to-220
fdp054n10 n-channel powertrench ? mosfet fdp054n10 rev. c1 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system genera l corporation, used under licens e by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairch ild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support de vices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any comp onent of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the desig n specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semicon ductor reserves the right to make changes at any time withou t notice to impr ove the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. a ll manufactures of semico nductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairch ild strongly encourages custom ers to purchase fairchild part s either directly from fa irchild or from authorized fairchild distributors who are listed by count ry on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair child?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 ?
|
